Solid-state imaging device and method of manufacturing the same

Details Solid-state imaging device and method of manufacturing the same Solid-state imaging device and method of manufacturing the same

1996-12-12

2000-02-29

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 60, 438 70, H01L 2177

Patent

active

060308524

ABSTRACT:
When light enters a solid-state imaging device obliquely, the light passing an optical path which misses a photodiode part is gathered by a second microlens located in the lower part which directs the light more vertically. A convergent rate of the oblique incident light can be prevented from decreasing. In this way, a solid-state imaging device having high sensitivity ratio, less smear (stray light), and excellent image characteristics can be provided. A metal with a high melting point or a metal silicide film thereof is used as a photo-shielding film. After making the photo-shielding film thinner, a Boro-Phospho-Silicate-Glass (BPSG) film is provided on the entire surface. Then, the second microlens is directly formed on an element provided with a surface protective coating comprising SiO.sub.2, SiON, or SiN, and on top of that, a color filter and an intermediate transparent film are formed, and then a first microlens is formed thereon. The second microlens located in the lower part is formed using a material having a larger refractive index than that of the intermediate transparent film or the BPSG film.

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