Switching circuit having floating gate mis load transistors

Details Switching circuit having floating gate mis load transistors Switching circuit having floating gate mis load transistors

1974-08-08

1976-05-04

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307213, 307214, 307304, H03K 1908, H03K 1940, H03K 1710

Patent

active

039550982

ABSTRACT:
A switching circuit comprises a driving MIS field-effect transistor, and a load MIS field-effect transistor, the gate of which is electrically floating and is so charged as to produce a gate voltage greater than the supply voltage of the load MIS field-effect transistor.

REFERENCES:
patent: 3619670 (1971-11-01), Heimbigner
patent: 3744036 (1973-07-01), Bentchkowsky
patent: 3845324 (1974-10-01), Feucht
patent: R27305 (1972-03-01), Polkinghorn et al.
MacDougall ete al., "Ion Implantation offers a bagful of benefits for MOS," Semiconductor Memories, edited by D. A. Hodges, IEEE Press, 1972, Reprinted from Electronics, (pub.), pp. 86-90, 6/22/1970.

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