Method of monitoring deposit in chamber, method of plasma proces

Details Method of monitoring deposit in chamber, method of plasma proces Method of monitoring deposit in chamber, method of plasma proces

1998-10-19

1999-04-27

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

118712, 156345, 134 1, 134 31, 216 60, 216 66, 216 67, 438 9, 438710, H01L 2100

Patent

active

058973788

ABSTRACT:
In the process of dry etching or the like, the bond between specific atoms contained in a deposit attached on the interior wall of a chamber and composed of an etching by-product is monitored by using an infrared ray. An incoming infrared ray generated from a light source for monitoring is directed to the deposit so that the absorption spectrum of an outgoing infrared ray passing through the deposit is measured by an infrared-ray measuring device. As a result, accurate information on the inside of the chamber can be obtained and a reduction in production yield due to variations in etching characteristics and generated particles can be prevented. Moreover, the availability of an apparatus can be increased by optimizing a maintenance cycle based on a specific variation in the absorption spectrum of the infrared ray. In particular, process administration and process control in such processing using plasma as dry etching and plasma CVD can be improved.

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patent: 4902631 (1990-02-01), Downey et al.
patent: 4975141 (1990-12-01), Greco et al.
patent: 5082517 (1992-01-01), Moslehi
patent: 5215588 (1993-06-01), Rhieu
patent: 5536359 (1996-07-01), Kawada et al.
patent: 5770097 (1998-06-01), O'Neill et al.

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