Process for fabricating a semiconductor device including a tungs

Details Process for fabricating a semiconductor device including a tungs Process for fabricating a semiconductor device including a tungs

1991-11-21

1993-02-02

Quach, T. N.

Fishing, trapping, and vermin destroying

437173, 437200, 437246, 148DIG147, H01L 21283, H01L 21324

Patent

active

051837820

ABSTRACT:
A process for fabricating a semiconductor device including the steps of: depositing a tungsten silicide adhesive layer over a wafer having a SiO.sub.2 insulating layer with a contact hole defined therein; treating the wafer by a rapid thermal annealing technique to impart further adherence to the tungsten silicide adhesive layer; and depositing tungsten over the tungsten silicide adhesive layer by CVD process to form a tungsten plug layer for electrical contact and a tungsten wiring layer.

REFERENCES:
patent: 4629635 (1986-12-01), Brors
patent: 4672740 (1987-06-01), Shirai et al.
patent: 4789885 (1988-12-01), Brighton et al.
patent: 4960732 (1990-10-01), Dixit et al.
patent: 5084417 (1992-01-01), Joshi et al.
patent: 5117276 (1992-05-01), Thomas et al.
"Reliable Tungsten Chemical Vapor Deposition Process . . . " IBM Tech. Disc. Bull., vol. 30, No. 10, Mar. 1988, pp. 162-163.
Wilson, et al., "Rapid Annealing Technology . . . ", Solid State Technology, Jun. 1985, pp. 185-190.

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