Method for manufacturing a photodetector for sensing light havin

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

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427125, 427307, 427344, 4273977, 438 98, 438960, B05D 512, H01L 3118

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056654235

ABSTRACT:
The present invention is related to a method for manufacturing a photodetector which comprises the steps of: (a) preparing a substrate having a back surface; (b) applying a first conducting layer on the back surface; (c) annealing the substrate coated with the first conducting layer in an inert gas atmosphere; (d) applying a anti-corrosion layer on the first conducting layer; (e) immersing the anti-corrosion layer-applied substrate in a hydrofluoric acid aqueous solution with a concentration of 5%.about.10%; (f) eroding the anti-corrosion layer-applied substrate under a current density of about 12.5.about.25 mA/cm.sup.2 for about 5.about.40 minutes to obtain a porous layer therereon; and (g) applying a thin film layer of a second conducting layer to an upper surface of the porous layer to obtain the photodetector. The present photodetector has a wider frequency band and a higher sensitivity than conventional ones and the present manufacturing method is simple and economical.

REFERENCES:
patent: 4522663 (1985-06-01), Ovshinsky et al.
patent: 4663188 (1987-05-01), Kane
patent: 5374581 (1994-12-01), Ichikawa et al.
patent: 5478757 (1995-12-01), Lee

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