Process for making a crystalline solid-solution powder with low

Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge

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20419215, 20419229, 20429813, 20429812, 501126, 501134, 419 23, 419 25, 419 31, 419 42, 419 49, 423624, 423115, 423593, 420129, 420555, 420590, 428697, 428701, 428702, C01G 1900, H01B 108, C01B 1332

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ABSTRACT:
A process for making a crystalline solid-solution powder which involves reacting at least two reactants in a plasma arc of a plasma chamber and blast-cooling the resultant product in a high velocity gas stream to form the powder. The first reactant is a molten metal alloy and the second reactant is a gas. The reaction is carried out in a plasma arc and the products rapidly cooled by a gas stream acting at the outlet opening of the plasma chamber. The crystalline solid-solution powder formed by the process has a low electrical resistivity. If an indium-tin alloy is used as the first reactant and oxygen as the second reactant, there is obtained an indium-tin-oxide (ITO) crystalline solid-solution powder which, when compacted to 40% of its theoretical density, has an electrical resistivity in the range of about 2 .OMEGA.cm. This ITO crystalline solid-solution powder is particularly suitable for preparing an ITO target, with high electrical conductivity and thus high achievable sputtering rates.

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