Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1991-01-08

1993-02-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437193, 148DIG131, 156648, H01L 2128, H01L 2188

Patent

active

051837811

ABSTRACT:
A process of forming an interconnection layer of polysilicon in a contact hole formed in an interlayer insulating film comprises opening the contact hole, depositing doped and nondoped polysilicon films in sequence, and etching back the polysilicon films by the reactive ion etching technique with at least one carbon fluoride gas to obtain the interconnection layer buried in the contact hole.

REFERENCES:
patent: 4728391 (1988-03-01), Lesk
"Nikkei Microdevices" Mar., 1989, pp. 70-74.
"1987 Symposium on VLSI Technology" The Digest of Technical Papers, pp. 103-104.
Wolf et al., Silicon Processing for the VLSI Era, Lattice Press (1984), pp. 547-551, 251-256.

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