Fabrication method for polysilicon contact plugs

Details Fabrication method for polysilicon contact plugs Fabrication method for polysilicon contact plugs

1995-06-28

1997-02-04

Niebling, John

Fishing, trapping, and vermin destroying

437191, 437195, 437203, 437233, H01L 2128

Patent

active

055997368

ABSTRACT:
A method for fabricating a polysilicon plug, to connect overlying metallizations, to underlying active device regions, has been developed. This process features filling a contact hole, to active device regions, with intrinsic polysilicon, and converting the intrinsic polysilicon to doped polysilicon, in all areas excluding the contact hole. The doped polysilicon is then selectively removed, leaving only the contact hole filled with intrinsic material. A doping process is then emoployed to lower the resistivity of the polysilicon in the contact hole.

REFERENCES:
patent: 5183781 (1993-02-01), Nakano
patent: 5196373 (1993-03-01), Beasom
patent: 5231052 (1993-07-01), Lu et al.
patent: 5244835 (1993-09-01), Hochiya
patent: 5286668 (1994-02-01), Chou
patent: 5316978 (1994-05-01), Boyd et al.

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