Method for doped shallow junction formation using direct gas-pha

Details Method for doped shallow junction formation using direct gas-pha Method for doped shallow junction formation using direct gas-pha

1994-08-01

1997-02-04

Niebling, John

Fishing, trapping, and vermin destroying

437950, 437959, H01L 21223

Patent

active

055997350

ABSTRACT:
Halides of a dopant species may be used as a dopant gas source to form shallow doped junctions using a direct gas-phase doping (GPD) process. These halides can also be combined with a carrier gas. Some advantages over conventional gas-phase doping processes include shallower junctions, shorter process times, lower processing temperatures, and the elimination of a separate surface cleaning step for native oxide removal.

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