Method for growing III-V semiconductor films using a coated reac

Details Method for growing III-V semiconductor films using a coated reac Method for growing III-V semiconductor films using a coated reac

1995-08-21

1997-02-04

Kunemund, Robert

Fishing, trapping, and vermin destroying

437126, 437133, 437107, 117 84, 117 92, H01L 21203

Patent

active

055997325

ABSTRACT:
In the method of the subject invention, a coating of AlN or a coating of SiC is grown in situ in the MOCVD or MOMBE reaction chamber to cover all surfaces therein. There is thus formed a stable layer on these surfaces that prevents oxygen and other impurities originally within the reaction chamber from reacting with the semiconducting layer to be grown.

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