Static random access memory cell and method of fabricating the s

Details Static random access memory cell and method of fabricating the s Static random access memory cell and method of fabricating the s

1995-09-14

1997-02-04

Dang, Trung

Fishing, trapping, and vermin destroying

437 41, 437 59, 437 48, H01L 2170

Patent

active

055997295

ABSTRACT:
An SRAM cell and a method of fabricating the SRAM cell are disclosed. The method includes the steps of forming a plurality of active regions and field regions on a substrate, forming a first common gate electrode and two impurity-doped regions to form two first bulk transistors, forming a second common gate electrode and two impurity-doped regions to form two second bulk transistors, forming a gate oxide layer on the substrate, forming a conductive layer, and etching back the conductive layer to thereby form two thin film transistors.

REFERENCES:
patent: 5179033 (1993-01-01), Adan
patent: 5348903 (1994-09-01), Pfiester et al.
patent: 5516715 (1996-05-01), Itabashi et al.
International Electron Devices Meeting 1990, San Francisco, CA Dec. 9-12, 1990, Sponsored by Electron Devices Society of IEEE, pp. 18.1.1-18.1.4.
International Electron Devices Meeting 1992, San Francisco, CA Dec. 13-16, 1992, Sponsored by Electron Devices Society of IEEE, pp. 32.7.1-32.7.4.

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