Method of forming light emitting diode array with dome geometry

Details Method of forming light emitting diode array with dome geometry Method of forming light emitting diode array with dome geometry

1974-10-29

1976-05-04

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Methods

148187, 156 17, 357 17, 427 85, H01L 750

Patent

active

039545342

ABSTRACT:
A structure for providing arrays or individual hemispherical diodes and methods of producing the diodes. When the diode array is to be part of a configuration utilizing a substrate, the substrate is selected to have radiation transparency, a lower refractive index, and lattice constant and lattice structure similar to that of a crystal layer grown in hemispheres formed in the substrate. When the diode array is to be removed from the substrate, a material that can be preferentially etched is grown between the hemispheres formed in the substrate and the grown crystal layer that is to have light emitting areas.

REFERENCES:
patent: 3649889 (1972-03-01), Hart
patent: 3675026 (1972-07-01), Woodall
patent: 3780358 (1973-12-01), Thompson
patent: 3801391 (1974-04-01), Dyment et al.
IBM Technical Disclosure Bulletin, Vol. 15, No. 6, Nov. 1972, Double Hetero-Junction GaAs Injection Laser by Dumke et al., p. 1998.

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