Semiconductor nonvolatile memory

Static information storage and retrieval – Floating gate – Particular biasing

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G11C 1140

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active

048212369

ABSTRACT:
A floating gate type semiconductor non-volatile memory injects carriers from a carrier supply region to a floating gate by a phenomenon called "punch-through" injection in which a space charge region is formed in a semiconductor substrate between the carrier supply region and a carrier injection region so as to accelerate the carriers and inject them into the floating gate without forwardly biasing the carrier injection region or the substrate.

REFERENCES:
patent: 4037242 (1977-07-01), Gosney
patent: 4163985 (1979-08-01), Schuermeyer et al.
patent: 4361847 (1982-11-01), Harari
patent: 4432075 (1984-02-01), Eitan
patent: 4462090 (1984-07-01), Iizuka

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