Static information storage and retrieval – Floating gate – Particular biasing
Patent
1987-02-09
1989-04-11
Moffitt, James W.
Static information storage and retrieval
Floating gate
Particular biasing
G11C 1140
Patent
active
048212369
ABSTRACT:
A floating gate type semiconductor non-volatile memory injects carriers from a carrier supply region to a floating gate by a phenomenon called "punch-through" injection in which a space charge region is formed in a semiconductor substrate between the carrier supply region and a carrier injection region so as to accelerate the carriers and inject them into the floating gate without forwardly biasing the carrier injection region or the substrate.
REFERENCES:
patent: 4037242 (1977-07-01), Gosney
patent: 4163985 (1979-08-01), Schuermeyer et al.
patent: 4361847 (1982-11-01), Harari
patent: 4432075 (1984-02-01), Eitan
patent: 4462090 (1984-07-01), Iizuka
Hayashi Yutaka
Kamiya Masaaki
Kojima Yoshikazu
Tanaka Kojiro
Adams Bruce L.
Kogyo Gizyutsuin
Moffitt James W.
Seiko Instruments & Electronics Ltd.
Wilks Van C.
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