Non-volatile semiconductor storage device selecting bit lines on

Details Non-volatile semiconductor storage device selecting bit lines on Non-volatile semiconductor storage device selecting bit lines on

1999-03-11

2000-08-01

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518523, 36523001, G11C 1604

Patent

active

060976306

ABSTRACT:
A non-volatile semiconductor storage device has a plurality of non-volatile memory cells formed by cell transistors in which a first voltage is applied to a word line through an address selection circuit and a second voltage lower than the first voltage is applied to the transistors through a selection line and/or a bit line. The voltage applied to the transistors is lower than that conventionally employed. Accordingly, a withstand voltage of the transistor can be reduced to decrease the occupied area of the transistors to realize higher integration.

REFERENCES:
patent: 4578777 (1986-03-01), Fang et al.
patent: 5428568 (1995-06-01), Kobayashi et al.
patent: 5495453 (1996-02-01), Wociechowski et al.
patent: 5517453 (1996-05-01), Strain et al.

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