Thyristor having a center pn junction formed by plastic deformat

Details Thyristor having a center pn junction formed by plastic deformat Thyristor having a center pn junction formed by plastic deformat

1980-07-01

1984-04-03

James, Andrew J.

357 20, 357 30, 357 32, 357 55, H01L 2906, H01L 2714, H01L 2974

Patent

active

044411154

ABSTRACT:
A thyristor comprises two semiconductor plates, discs or chips, one n-doped and one p-doped, each having a structure of parallel ridges on one major surface and an opposite conducting type layer on the other major surface, two plates, discs or chips being assembled together under pressure with the structured surfaces facing and rotated relative to each other so that the ridges cross and touch to form pn junctions produced by plastic deformation of the crystal lattice and pnpn layer sequences. The invention also includes a method of manufacturing such thyristors.

REFERENCES:
patent: 3152928 (1964-11-01), Hubner
patent: 4016593 (1977-04-01), Konishi et al.
S. Schaefer, "Herstellung Von p-n-Uebergaengen Durch Gemeinsame Plastische Verformung Von p- Und n- Dotiertem Germanium", Solid-State Electronics, vol. 11, (1968), 675-681.

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