Process for fabricating a semiconductor device having a high rel

Details Process for fabricating a semiconductor device having a high rel Process for fabricating a semiconductor device having a high rel

1993-06-07

1995-04-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

435242, 435 42, 435 43, 257411, H01L 21285

Patent

active

054078709

ABSTRACT:
A process for fabricating a high-reliability composite dielectric layer (19) includes the formation of a first oxynitride layer (14) on the surface (12) of a silicon substrate (10). The formation of the first oxynitride layer (14) is followed by an oxidation step to form a silicon dioxide layer (16) at the surface (12) of the substrate (10) and underlying the first oxynitride layer (14). The composite dielectric layer (19) is completed by exposing the substrate (10) to nitrous oxide, and diffusing a nitrogen bearing species through both the silicon dioxide layer (16) and the first oxynitride layer (14) to form a second oxynitride layer (18) underlying the silicon dioxide layer (16). The composite dielectric layer (19) exhibits a nitrogen-rich region at the interface between second oxynitride layer (18) and the silicon substrate (10). A second nitrogen rich region is also formed near the surface of the first oxynitride layer (14).

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