Coherent light generators – Particular active media – Semiconductor
Patent
1996-02-12
1998-02-03
Healy, Brian
Coherent light generators
Particular active media
Semiconductor
372 50, H01S 319
Patent
active
057152667
ABSTRACT:
A semiconductor laser comprises a first laser structure, a tunnel diode structure, and a second laser structure which are successively formed so that the forward directions of the first laser structure and the second laser structure are the same as the forward direction of the semiconductor laser, and the forward direction of the tunnel diode structure is reverse to the forward direction of the semiconductor laser, wherein laser beams are generated when a current flows in the forward direction, and an optical waveguide layer having a larger refractive index than the refractive indices of the first laser structure and the second laser structure and provided between the second laser structure and the tunnel diode structure or between the first laser structure and the tunnel diode structure. Therefore, even though the first laser structure 14 and the second laser structure 16 are formed at a long distance, the laser beam at the light emitting surface is made a single peak in shape, thereby increasing the output power of the laser.
REFERENCES:
patent: 5212706 (1993-05-01), Jain
patent: 5365536 (1994-11-01), Seki
Casey, Jr. et al, Heterostructure Lasers Part A: Fundamental Principles, New York: Academic Press, Inc, 1978 (no month available), pp. 44-45.
Casey, Jr. et al, Heterostructure Lasers Part B: Materials and Operating Characteristics, New York: Academic Press, Inc, 1978 (no month available), pp. 12-13.
Healy Brian
Mitsubishi Denki & Kabushiki Kaisha
Phan Luong-Quyen T.
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