Monolithically integrated circuit with connectible and/or discon

Details Monolithically integrated circuit with connectible and/or discon Monolithically integrated circuit with connectible and/or discon

1981-08-19

1984-04-03

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307464, 307580, 365200, 371 8, 357 29, H03K 17687, H01L 2714, G11C 700

Patent

active

044410360

ABSTRACT:
A monolithically integrated circuit has circuit portions which are selectively connectible and disconnectible by switch elements from remaining portions of the integrated circuit. The switch elements are comprised of integrated field effect transistors in MIS technology with a gate insulating layer. By use of an electron beam, gate layers in some of the transistors can be selectively charged so as to cause a shift in a threshold voltage of those transistors. In this fashion, these transistors can assume a first switching state while the remaining transistors are in a second switching state when a potential is applied to the circuit.

REFERENCES:
patent: 3721962 (1973-03-01), Foster et al.
patent: 3872321 (1975-03-01), Matsue
patent: 3913072 (1975-10-01), Catt
patent: 4190849 (1980-02-01), Powell
patent: 4233674 (1980-11-01), Russell et al.
"Siemens Forschungs-U. Entwicklungsbericht", vol. 4, 1975, No. 6, pp. 345-351.
"IEEE Transactions on Electron Devices", vol. ED-26, Nr. 6, Jun. 1979, pp. 853-860.
"A Users Handbook of Semiconductor Memories", 1977, pp. 242-245 and 248, 249.

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