CMOS Turn-on circuit

Details CMOS Turn-on circuit CMOS Turn-on circuit

1981-10-05

1984-04-03

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307594, 307451, 307475, H03K 1708, H03K 1722, H03K 17284

Patent

active

044410352

ABSTRACT:
A CMOS integrated circuit which requires a higher and a lower supply voltage source, often includes a parasitic diode commonly in the form of a thyristor which is formed with its anode connected to the lower voltage supply terminal and its cathode to the higher voltage supply terminal. The present invention is an FET which has its source-drain circuit connected between the lower voltage terminal of the integrated circuit and the lower voltage source, and its gate to the higher voltage source. This protects the integrated circuit diode from fusing if either passive or dynamic conditions result in the faster voltage rise at the anode relative to the cathode when supply voltage is applied to the integrated circuit, since the voltage at the anode is protected from rising faster than the cathode.

REFERENCES:
patent: Re27972 (1974-04-01), Borrer et al.
patent: 3842411 (1974-10-01), Naito
patent: 3895239 (1975-07-01), Alaspa
patent: 4057844 (1977-11-01), Smedley
patent: 4353105 (1982-10-01), Black
patent: 4366560 (1982-12-01), McDermott et al.

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