Semiconductor laser device having a lens-like refractive index d

Details Semiconductor laser device having a lens-like refractive index d Semiconductor laser device having a lens-like refractive index d

1988-03-28

1989-10-03

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 357 17, H01S 319

Patent

active

048721751

ABSTRACT:
In a semiconductor laser device having an active layer and clad layers, lens-like portions which magnify radiation are formed in the active layer and/or a clad layer where the radiation leaks, thereby making it possible to enlarge a stripe width and to produce a fundamental mode oscillation of high output. Futher, a lens-like portion which condenses the radiation is formed at an end face of an emission port for a laser beam, thereby making it possible to narrow a radiant angle of the laser beam.

REFERENCES:
patent: 4675875 (1987-06-01), Takamiya
patent: 4703219 (1987-10-01), Mesquida
patent: 4740259 (1988-04-01), Heinen
Aiki et al., "Channeled-Substrate . . . Injection Laser"; Appl. Phys. Lett., vol. 30, No. 12; Jun. 15, 1977; pp. 649-651.

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