Semiconductor laser device having a grating structure

Details Semiconductor laser device having a grating structure Semiconductor laser device having a grating structure

1988-09-01

1989-10-03

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 96, H01S 319

Patent

active

048721743

ABSTRACT:
A semiconductor laser device comprises a laminated crystal structure which includes a Ga.sub.1-y Al.sub.y As optical guiding layer and a Ga.sub.1-z Al.sub.z As (z>y) cladding layer in this sequence, the cladding layer is formed on both a Ga.sub.1-x Al.sub.2 As (0.ltoreq.x.ltoreq.0.1 and x<y) layer and the optical guiding layer. The AlAs mole fraction y of the optical guiding layer is greater than 0.1.

REFERENCES:
patent: 4045749 (1977-08-01), Burnham et al.
patent: 4416012 (1983-11-01), Botez et al.
patent: 4480331 (1984-10-01), Thompson
patent: 4573161 (1986-02-01), Sakai et al.
patent: 4635268 (1987-01-01), Motegi et al.
patent: 4745612 (1988-05-01), Hayakawa et al.
patent: 4757510 (1988-07-01), Kaneno et al.

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