Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1986-09-24

1988-07-12

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

047575107

ABSTRACT:
A semiconductor laser device which includes a first conductivity type semiconductor substrate; a first conductivity type first cladding layer, an active layer, and a second conductivity type second cladding layer successively provided on the substrate, wherein both the cladding layers have energy band gaps larger than that of the active layer; a first conductivity type current blocking layer having an energy band gap larger than that of the second cladding layer being provided on the second cladding layer, having a groove removed therefrom so as to form an exposed stripe portion on the second cladding layer; and a second conductivity type third cladding layer having an energy band gap smaller than that of the current blocking layer and larger than that of the active layer formed on the current blocking layer and on the stripe portion.

REFERENCES:
patent: 4480331 (1984-10-01), Thompson
"Single-Longitudinal-Mode Metalorganic Chemical-Vapor-Deposition Self-Aligned GaAlAs-GaAs Double-Heterostructure Lasers", by J. J. Coleman et al., Applied Physics Letters, Aug. 1, 1980, pp. 262 and 263.

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-668908