Electron beam source employing a photo-emitter cathode

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250310, 250423R, 250396R, 313542, 313544, H01J 2702

Patent

active

048209279

ABSTRACT:
A scanned electron beam system employs an electron beam source using an NEA activated photo-emitter as the cathode. The activated photo-emitter cathode produces a pre-shaped electron beam having a relatively small spot focussed on a target plane. The beam is selectively deflected to scan the beam spot along the target plane to expose desired patterns on that plane. The distance between the cathode and anode can be made large enough to accommodate in situ replenishment of cathode material, such as Cesium, without obstructing the electron optical path. The system includes two vacuum chambers which are differentially pumped through respective ports. The first chamber, in which the anode and cathode are located, is utilized for establishing the required electrostatic field. The second chamber is employed to produce the necessary focussing and selective beam deflection.

REFERENCES:
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patent: 3617686 (1971-11-01), Dietrich et al.
patent: 4039810 (1977-08-01), Heritage
patent: 4066905 (1978-01-01), Dassler et al.
patent: 4227090 (1980-10-01), Amboss
patent: 4460831 (1984-07-01), Oettinger et al.

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