Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1987-09-15
1989-04-11
Fields, Carolyn E.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250310, 250423R, 250396R, 313542, 313544, H01J 2702
Patent
active
048209279
ABSTRACT:
A scanned electron beam system employs an electron beam source using an NEA activated photo-emitter as the cathode. The activated photo-emitter cathode produces a pre-shaped electron beam having a relatively small spot focussed on a target plane. The beam is selectively deflected to scan the beam spot along the target plane to expose desired patterns on that plane. The distance between the cathode and anode can be made large enough to accommodate in situ replenishment of cathode material, such as Cesium, without obstructing the electron optical path. The system includes two vacuum chambers which are differentially pumped through respective ports. The first chamber, in which the anode and cathode are located, is utilized for establishing the required electrostatic field. The second chamber is employed to produce the necessary focussing and selective beam deflection.
REFERENCES:
patent: 3243570 (1966-03-01), Boring
patent: 3617686 (1971-11-01), Dietrich et al.
patent: 4039810 (1977-08-01), Heritage
patent: 4066905 (1978-01-01), Dassler et al.
patent: 4227090 (1980-10-01), Amboss
patent: 4460831 (1984-07-01), Oettinger et al.
Harte Kenneth J.
Langner Guenther O.
Angus Robert M.
Control Data Corporation
Edell Ira C.
Fields Carolyn E.
Helzer Charles W.
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