Sidewall charge-coupled device with trench isolation

Details Sidewall charge-coupled device with trench isolation Sidewall charge-coupled device with trench isolation

1993-05-05

1994-08-02

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257231, 257241, 257243, H01L 2978, H01L 2714, H01L 3100

Patent

active

053348680

ABSTRACT:
A charge-coupled imaging device comprising a plurality of trenches in the surface of the silicon substrate which separate adjacent columns in the CCD device. A plurality of surface electrodes are provided on the surface of the charge-coupled device extending perpendicular to the isolation trenches, which electrodes provide for clocked transfer of charges between adjacent cells within each column of the charge-coupled device. The CCD cells are formed on the silicon ridges delineated between the isolation trenches, and this structure maximizes the three dimensional surface area of the CCD cells and facilitates transport of charges along the CCD cell sidewalls. The sidewall CCD with trench isolation provides a CCD cell layout size the same as that of a conventional two dimensional CCD cell, but with an increased charge capacity per CCD cell because of the larger three dimensional areas of the CCD cells. The increase in charge capacity means a larger signal-to-noise ratio and consequently a larger dynamic range. In one embodiment, a plurality of shallow electrodes are defined under the surface electrodes to increase the charge carrying surface area and provide better gate control.

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Yamada et al., "Trench CCD Image Sensor," IEEE Transactions on Consumer Electronics, vol. 35, No. 3, pp. 360-367, Aug. 1989.
JP-A-63-69263, Patent Abstracts of Japan, vol. 12, No. 293, (E-645)(3140), Aug. 10, 1988.
Fossum, "A Novel Trench-Defined MISIM CCD Structure for X-ray Imaging and Other Applications," IEEE Electron Device Letters, vol. 10, No. 5, May 1989.
Liu, "V-Grooved Charge-Coupled Device," IBM Technical Disclosure Bulletin, vol. 20, No. 11, Mar. 1978.

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