Semiconductor device

Details Semiconductor device Semiconductor device

1984-07-13

1989-10-03

James, Andrew J.

357 41, H01L 2978

Patent

active

048720429

ABSTRACT:
In a semiconductor device, a MOS transistor is formed in an island-like semiconductor region formed in a semiconductor substrate. The switching of the MOS transistor is controlled by changing a potential in the semiconductor region by means of a control circuit.

REFERENCES:
patent: 3447046 (1969-05-01), Cricchi et al.
IBM Technical Disclosure Bulletin vol. 10, #7, Dec. 1967, by McDowell p. 1032 "Use of MOS Substrate as Control Element".
IBM Technical Disclosure Bulletin vol. 15, #6, p. 1765 by Ho et al Nov. 1972.

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