Process for forming a semiconductor device having a reducing/oxi

Details Process for forming a semiconductor device having a reducing/oxi Process for forming a semiconductor device having a reducing/oxi

1993-06-07

1995-04-18

Thomas, Tom

Fishing, trapping, and vermin destroying

437 52, 437192, 437195, 437919, H01L 2702

Patent

active

054078555

ABSTRACT:
The present invention includes a semiconductor device having a layer including an elemental metal and its conductive metal oxide, wherein the layer is capable being oxidized or reduced preferentially to an adjacent region of the device. The present invention also includes processes for forming the devices. Substrate regions, silicon-containing layers, dielectric layers, electrodes, barrier layers, contact and via plugs, interconnects, and ferroelectric capacitors may be protected by and/or formed with the layer. Examples of elemental metals and their conductive metal oxides that may be used with the present invention are: ruthenium and ruthenium dioxide, rhenium and rhenium dioxide, iridium and iridium dioxide, osmium and osmium tetraoxide, or the like.

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Bernstein, et al.; "Fatigue of ferroelectric PbZr.sub.x Ti.sub.y O.sub.3 capacitors with Ru and RuO.sub.x electrodes"; J. Mater. Res.; vol. 8, No. 1, pp. 12-13 (Jan. 1993).
Brassington; "Memory Applications of Ferroelectric Thin Films"; IEDMS, pp. 1-8 (1990).

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