Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-09-23
2000-08-01
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257764, 257765, 438675, H01L 2348, H01L 2352, H01L 2940
Patent
active
060970944
ABSTRACT:
There is provided a semiconductor device including a lower wiring layer including a first layer containing aluminum therein and a second layer formed on the first layer, the second layer having an extended portion extending beyond an outer surface of the first layer, an interlayer insulating layer formed covering the lower wiring layer therewith, the interlayer insulating layer being formed with a hole including a first portion terminating at an upper surface of the second layer and a second portion passing the second layer but not reaching a bottom of the first layer, an electrically conductive material filling the hole therewith, and an upper wiring layer formed on the interlayer insulating film in electrical connection with the lower wiring layer through the electrically conductive material. The first layer is not exposed to the second portion of the hole because of the interlayer insulating layer existing under the extended portion of the second layer. Hence, it is possible to prevent aluminum contained in the first layer from being eroded during CVD carried out for forming a contact plug filling the hole therewith.
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Japanese Office Action dated Sep. 22, 1998 with English language translation of Japanese Examiner's comments.
Cao Phat X.
Chaudhuri Olik
NEC Corporation
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