Method of fabricating an electrically alterable resistive compon

Details Method of fabricating an electrically alterable resistive compon Method of fabricating an electrically alterable resistive compon

1993-10-07

1995-04-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437922, H01L 21265

Patent

active

054078512

ABSTRACT:
A memory cell includes a pair of spaced apart conductors on an insulating layer, and a novel electrically alterable resistive component between the conductors. This resistive component consists essentially of a single element semiconductor selected from the group of Si, Ge, C, and .alpha.-Sn, having a crystalline grain size which is smaller than polycrystalline. Dopant atoms in the semiconductor are limited to be less than 10.sup.17 atoms/CM.sup.3 ; and, such a doping range includes zero doping. Process temperatures are limited such that all dopant atoms are interstitial in the semiconductor crystals and not substitutional.

REFERENCES:
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4404581 (1983-09-01), Tam et al.
patent: 4599705 (1986-07-01), Holmberg et al.
S. M. Sze, VLSI Technology McGraw Hill, 1983 pp. 103-105, 127.

Affiliated with

Also associated with

Rating

Method of fabricating an electrically alterable resistive compon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating an electrically alterable resistive compon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating an electrically alterable resistive compon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-66663