Semiconductor cold electron emission device

Details Semiconductor cold electron emission device Semiconductor cold electron emission device

1993-09-29

1994-08-02

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257 11, 257 77, 257 12, H01L 29161

Patent

active

053348532

ABSTRACT:
A semiconductor cold electron emission device comprising a type I heterojunction formed of a P-type semiconductor mixture of AlN and a N-type semiconductor mixture of SiC which junction is forward biased so that electrons are monoenergetically emitted from the P-type semiconductor mixture.

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patent: 4040080 (1977-08-01), Hara et al.
patent: 4063269 (1977-12-01), Hara et al.
patent: 4063276 (1977-12-01), Hara et al.
patent: 4382837 (1987-05-01), Rutz
3rd International Conference on Amorphous & Crystalline Silicon Carbide and ther Group IV-IV Materials, Apr. 11-13, 1990, G. L. Harris, et al.
Philips Technical Review-Silicon Cold Cathodes, vol. 43, No. 3, Jan. 1987, G. G. P. Van Gorkom, et al.
Electronics Letters, Aug. 1, 1991, vol. 27, No. 16, M. E. Kordesh et al, "Cold Field from CVD . . . microscopy".

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