SOI transistor threshold optimization by use of gate oxide havin

Details SOI transistor threshold optimization by use of gate oxide havin SOI transistor threshold optimization by use of gate oxide havin

1993-06-29

1995-04-18

Fourson, George

Fishing, trapping, and vermin destroying

437 21, 437941, 257405, H01L 21265, H01L 21335

Patent

active

054078504

ABSTRACT:
Threshold optimization for SOI transistors is achieved through the formation of a layer of positive charge within the gate to correspond to the positive polarity formed in the substrate by ion implantation for threshold voltage control. A positive charge layer is formed by furnishing sulfur ions on the substrate before growth of an oxide to form a portion of the gate oxide. The sulfur will form a charge layer on the surface of the oxide, and an additional oxide is then deposited on the same to form the gate oxide as a sandwich with the positive charge layer in the same.

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