Semiconductor device having discharging portion

Details Semiconductor device having discharging portion Semiconductor device having discharging portion

1998-12-31

2000-08-01

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257435, H01L 27168, H01L 29768

Patent

active

060970456

ABSTRACT:
A semiconductor device and a fabrication method are disclosed which are capable of preventing a charge-up phenomenon which occurs during a plasma process, and the semiconductor device includes a center portion of a semiconductor device having a passing through portion and a blocking portion and formed on the center portion of the semiconductor substrate, and a peripheral portion having a pad and a discharging portion formed near the pad and connected with the ground.

REFERENCES:
patent: 5028970 (1991-07-01), Masahoshi
patent: 5210433 (1993-05-01), Ohsawa et al.
patent: 5576538 (1996-11-01), Sakai et al.
patent: 5744831 (1998-04-01), Tanaka
patent: 5773859 (1998-06-01), Uens
patent: 5825840 (1998-10-01), Anagnostopoulos
You, K. et al., "A Novel Two-Step Etching Process for Reducing Plasma-Induced Oxide Damage", Solid State Electronics, vol. 39, No. 5, 1996, pp. 689-693.

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