Method of manufacturing a thin film transistor

Fishing – trapping – and vermin destroying

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437101, 437909, 437160, 257 57, 257 59, H01L 21265

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active

054078466

ABSTRACT:
There is provided a TFT having a trench surrounding gate structure that is capable of decreasing the leakage current generated during the Off-State of the TFT by securing enough channel length despite the smallness of the area, increasing the driving current by securing a sufficient cross-sectional area of an inverted channel during the On-State of the TFT, and improving the resolution of the LCD by reducing the space occupied by the TFT in the panel during the manufacturing of the LCD.

REFERENCES:
patent: 5160491 (1992-11-01), Mori
patent: 5229310 (1993-07-01), Sivan
patent: 5250450 (1993-10-01), Lee et al.

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