Vertical current flow semiconductor device utilizing wafer bondi

Details Vertical current flow semiconductor device utilizing wafer bondi Vertical current flow semiconductor device utilizing wafer bondi

Filed on

1991-05-06

Date issued

1993-02-02

Examiner

Chaudhuri, Olik

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437 29, 437974, 437 6, 148DIG12, 148DIG135, 257341, 257684, H01L 2970

Type

Patent

Status

active

Patent number

051837692

Description

ABSTRACT:
An intermediate contact layer (16) is created within a vertical current flow semiconductor device such as an enhanced insulated gate bipolar transistor (EIGBT) (17). An active wafer (11) that is used for forming active elements of the device is wafer bonded to a conductor (16) that is on a surface of a substrate wafer (12). The wafer bonding not only forms the intermediate contact layer (16) but also diffuses a series of P (18) and N (19) regions into the active wafer (11) thereby forming ohmic contacts between the P (18) and N (19) regions and the intermediate contact layer (16). The substrate wafer (12) provides support for the active wafer (11) during subsequent wafer processing operations.

REFERENCES:
patent: 4738935 (1988-04-01), Shimobo et al.
patent: 4826787 (1989-05-01), Nuto et al.
patent: 5023696 (1991-06-01), Ogimo

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