Semiconductor contact structure in integrated semiconductor devi

Details Semiconductor contact structure in integrated semiconductor devi Semiconductor contact structure in integrated semiconductor devi

1996-11-14

1998-02-03

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257734, 257736, 257750, 257764, 257774, H01L 2348, H01L 2352, H01L 2940

Patent

active

057148040

ABSTRACT:
An electrical connection structure is provided for protecting a barrier metal layer within a contact opening during the formation of an aluminum interconnection layer overlying a tungsten plugged connection structure. The deposited tungsten plug overlying the barrier metal layer is etched back sufficiently to create a slight recess at the opening. A thin layer of tungsten is then selectively deposited for filling the recess. This layer acts as an etch stop during aluminum interconnection layer formation and protects the underlying barrier metal layer.

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Lee, Pei-Ing, John Cronin and Carter Kaanta, "Chemical Vapor Deposition of Tungsten (CVD W) as Submicron Interconnection and Via Stud," J. Electrochem. Soc. 136:(7), pp. 2108-2112, 1989.
Estabil, J.J., H.S. Rathore and E.N. Levine, Electromigration Improvements with Titanium Underlay and Overlay in AL(Cu) Metallurgy, Jun. 11-12, 1991 VMIC Conference, General Technology Division, IBM Corporation, Hopewell Junction, NY 12533, pp. 242-yy248.

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