Semiconductor device with an indium-tin-oxide in contact with a

Details Semiconductor device with an indium-tin-oxide in contact with a Semiconductor device with an indium-tin-oxide in contact with a

1996-04-17

1998-02-03

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 52, 257 59, 257 72, 257291, 437 40, 437 41, H01L 2904, H01L 31062

Patent

active

057147906

ABSTRACT:
A semiconductor device has an ITO film which is in contact with a semiconductor or a metal, the ITO film having an insulating film with SiN as the main constituent provided on or under at least a portion of the ITO film.

REFERENCES:
patent: 4990460 (1991-02-01), Moriyama
patent: 5341012 (1994-08-01), Misawa et al.
S.M. Sze, "Physics of Semiconductor Devices" John Wiley & Sons, 1988, New York, p. 819.
M. Sasuga et al. "10.4 in. Diagonal Multicolor Display Using Amorphous Silicon TF7-LCD", Vapor Display, 1989 pp. 510-512.
Conference Record of the 1988 International Display Research Conference, Oct. 4, 1988, pp. 155-158, Takeda et al., "An Amorphous Si TFT Array With TaOx/SiNx Double Layered Insulator For Liquid Crystals Displays."
IEEE Electron Device Letters, vol. 12, No. 8, Aug. 1991, pp. 413-415, Kakinuma et al., "Direct-Contact Type Images Sensors Using Novel Amorphous-Silicon Photodiode Array."
Applied Optics, vol. 18, No. 10, May 15, 1979, pp. 1488-1489, Hass et al., "Transparent Electrically Conducting Thin Films For Spacecraft Temperature Control Applications."
Patent Abstracts of Japan, vol. 10, No. 278, p. 499, Sep. 20, 1986, & JP-A-61 099 121, May 17, 1986.
Patent Abstracts of Japan, vol. 6, No. 159, p. 136, Aug. 20, 1982, & JP-A-57 076 525, May 13, 1982.

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