Process for preparing a silicon carbide device

Details Process for preparing a silicon carbide device Process for preparing a silicon carbide device

1986-10-02

1988-07-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437100, 437192, 437193, 437233, 148DIG148, H01L 21441, H01L 2904, H01L 29161, H01L 2948

Patent

active

047570288

ABSTRACT:
A silicon carbide layer(s) is provided on a silicon substrate. If necessary, a desired pattern of the silicon carbide layer(s) is allowed to remain, while the other portion(s) is embedded with SiO.sub.2. If necessary, the silicon carbide layer(s) may be constituted of a barrier layer and a device-forming layer. A layer capable of easily forming an insulating layer, such as a polycrystalline silicon layer, is provided on the silicon carbide layer to form first electrodes, followed by insulation of the surface, such as oxidation of the surfaces of the first electrodes and the silicon carbide layer. Second electrodes are further formed in self alignment by utilizing the insulating layer of the surface of the first electrodes. This process is useful in preparation of a silicon carbide device capable of operation at high temperatures.

REFERENCES:
patent: 3968562 (1976-07-01), Van Lierop
patent: 3982262 (1976-09-01), Karatsjuba et al.
patent: 4545116 (1985-10-01), Lau
patent: 4581815 (1986-04-01), Cheung et al.
Suzuki et al., "Thermal Oxidation of SiC . . . ", Jap. J. Appl. Phys., V. 21 (Apr., 1982), pp. 579-585.
Jackson, Jr. et al., "Fabrication of Epitaxial SiC . . . ", Transactions Met. Soc. of AIME, V. 233 (Mar. 1965), pp. 468-472.
Campbell, "Whatever Happened to Silicon Carbide", IEEE Transactions Ind. Electron., v. IE-29 (May, 1982), pp. 124-128.
Experimental 3C-SiC MOSFET, Y. Kondo et al., IEEE Electron device letters, vol. EOL-7, No. 7, Jul. 1986.
Experimental fabrication of B-SiC MOSFET, Y Kondo et al., Apr. 24, 1986.

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