Method of fabricating semiconductor device by forming doped regi

Details Method of fabricating semiconductor device by forming doped regi Method of fabricating semiconductor device by forming doped regi

1991-07-15

1993-02-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 31, 437 35, 437 80, 148DIG10, 148DIG143, H01L 21265

Patent

active

051837684

ABSTRACT:
A first semiconductor region is of a first conduction type and forms a transistor collector. A second semiconductor region is of a second conduction type and forms a transistor base. The second semiconductor region extends in the first semiconductor region. A third semiconductor region is of the first conduction type and forms a transistor emitter. The third semiconductor region extends in the second semiconductor region. A fourth semiconductor region is of the first conduction type and has a first portion and a second portion. The first portion extends in a part of the first semiconductor region below an edge of the third semiconductor region, and the second portion extends from the first semiconductor region into a part of the second semiconductor region outward of the edge of the third semiconductor region to limit a width of the transistor base.

REFERENCES:
patent: 3913123 (1975-10-01), Masaki et al.
patent: 4267557 (1981-05-01), Muramoto et a.
"gigabit Logic Bipolar Technology: Advanced Super Self-Aligned Process Technology," Electronics Letters, vol. 19, No. 8 (Apr. 14, 1983), pp. 283-284.
Konaka et al., "A20 ps/G Si Bipolar IC Technology," Japan Electronic Information Communication Society, pp. 1-330 to 1-331.
"A Sub-30psac Si Bipolar LSI Technology", Gomi et al., IEEE Publication dated 1988, pp. 744-747.

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