Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1999-08-27
2000-08-01
Dang, Trung
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
438427, 438435, 438437, H01L 2176
Patent
active
06096622&
ABSTRACT:
The present invention discloses a method of a shallow trench isolation of a semiconductor device. The method comprises the steps of: forming a mask layer having a silicon layer on a semiconductor substrate; forming a trench mask pattern by etching a selected portion of the mask layer; forming a trench by etching the semiconductor substrate by using the trench mask pattern; forming an insulating layer for filling on the trench mask pattern so as to fill the trench; forming a crack in the insulating layer for filling formed on the trench mask pattern; removing a selected portion of the insulating layer for filling; and removing the trench mask pattern.
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Jung Moon Youn
Kim Chang Gyu
Dang Trung
Dongbu Electronics Co. Ltd.
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