Reliable MOSFET device and method for making same

Details Reliable MOSFET device and method for making same Reliable MOSFET device and method for making same

1976-04-29

1977-05-31

Lynch, Michael J.

357 52, 357 54, H01L 2978

Patent

active

040273210

ABSTRACT:
A substantial increase in the reliability of metal-oxide-semiconductor field effect transistor (MOSFET) devices having a thin gate dielectric is achieved by providing a thin film of phosphosilicate glass (PSG) on the thin dielectric and completely covering the PSG layer with the gate metallization. The metallization extends over a thick film of phosphosilicate glass which is disposed on the thick insulator covering the source and drain regions.

REFERENCES:
patent: 3512057 (1970-05-01), Hatcher
patent: 3560810 (1971-02-01), Balk et al.
patent: 3806778 (1974-04-01), Shimakura et al.
patent: 3841926 (1974-10-01), Garnache et al.

Affiliated with

Also associated with

Rating

Reliable MOSFET device and method for making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reliable MOSFET device and method for making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reliable MOSFET device and method for making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-662401