Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1998-02-17
1999-10-12
Fourson, George R.
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
438978, H01L 21762
Patent
active
059666153
ABSTRACT:
A trench for isolating active devices on a semiconductor substrate, formed by creating a trench which has a peripheral edge, and disposing an isolating material in the trench. The isolating material extends over the peripheral edge of the trench, thereby covering at least a portion of the substrate surrounding the trench, and substantially limiting leakage of the active devices disposed on the substrate.
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Fazan Pierre C.
Roberts Martin C.
Sandhu Gurtej S.
Fields Walter D.
Fourson George R.
Micro)n Technology, Inc.
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