Process for producing lateral bipolar transistor

Details Process for producing lateral bipolar transistor Process for producing lateral bipolar transistor

1996-06-19

1998-02-03

Niebling, John

Fishing, trapping, and vermin destroying

437 31, 437 33, H01L 21265

Patent

active

057143978

ABSTRACT:
In a lateral bipolar transistor and a method for producing the same, an emitter layer and a collector layer are disposed on a structured dielectric layer. The structured dielectric layer is located in a plane of a base layer and is interrupted by the base layer in such a way that between the base layer and portions of the structured dielectric layer, the base layer is contacted on one side by the emitter layer and on the opposite side by the collector layer.

REFERENCES:
patent: 4903106 (1990-02-01), Fukunaga et al.
patent: 5406113 (1995-04-01), Horie
Muller et al., "Device Electronics for IC's", p. 327, 1986.
Japanese Journal of Applied Physics, vol. 30, No. 128, Dec. 1191, pp. L2080-L2082 (Hugh et al.) "A New SO1-Lateral Bipolar Transistor for High-Speed Operation".
IBM Technical Disclosure Bulletin, vol. 32, No. 3B, Aug. 1989, pp. 59-60, "High-performance vertical NPN with SO1-Lateral PNP".
IBM Technical Disclosure Bulletin, vol. 32, No. 6B, Nov. 1989, pp. 157-159, "Lateral Bipolar Transistor with Elevated Base Contact".

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