Method of fabricating capacitor plate

Details Method of fabricating capacitor plate Method of fabricating capacitor plate

1998-01-05

1999-10-12

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, H01L 2120

Patent

active

059666102

ABSTRACT:
A method of fabricating a capacitor plate constitutes first providing a substrate. Then, first insulating layer is formed over the substrate. Sequentially, a buffering layer and a second insulating layer, both of which constitute a stacked structure, are formed over the first insulating layer. Next, the stacked structure is patterned into an opening thereby exposing a portion of the first insulating layer therethrough. Subsequently, conducting spacers are formed on the sidewalls of the opening. The second insulating layer is thereafter removed, and simultaneously a portion of the first insulating layer not covered by the buffering layer and the conducting spacers are removed to form a contact window, thereby exposing a portion of the substrate therethrough. Then, a conducting layer is conformably deposited over the substrate, and thereafter etched away until a portion of the buffering layer is exposed. Finally, the exposed buffering layer is removed. The remaining conducting layer and the conducting spacers constitute the capacitor's bottom electrode plate.

REFERENCES:
patent: 5389568 (1995-02-01), Yun
patent: 5554557 (1996-09-01), Koh
patent: 5693554 (1997-12-01), Lee
patent: 5792689 (1998-08-01), Yang et al.

Affiliated with

Also associated with

Rating

Method of fabricating capacitor plate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating capacitor plate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating capacitor plate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-661816