Semiconductor memory device having storage capacity of 2.sup.2N+

Details Semiconductor memory device having storage capacity of 2.sup.2N+ Semiconductor memory device having storage capacity of 2.sup.2N+

1998-04-14

1999-10-12

Nelms, David

Static information storage and retrieval

Format or disposition of elements

36523003, G11C 502, G11C 800

Patent

active

059663162

ABSTRACT:
A main surface of a semiconductor substrate having the aspect ratio of 1:2 is equally divided into 9 regions of 3 rows and 3 columns, and a 2.sup.N-2 -bit subarray portion having the aspect ratio of 1:2 is arranged in each region other than a central region. The central region is provided with control circuitry and pads. Thus, a DRAM chip having the aspect ratio of 1:2 and the storage capacity of 2.sup.2N+1 bits can be formed. The DRAM chip can be contained at a high effective ratio in a package having the aspect ratio of 1:2 as is conventional.

REFERENCES:
patent: 5357478 (1994-10-01), Kikuda et al.
patent: 5642323 (1997-06-01), Kotani et al.
patent: 5771200 (1998-06-01), Cho et al.
patent: 5867439 (1999-02-01), Asakura et al.

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