Methods of making silicon-based sensors

Metal working – Method of mechanical manufacture – Electrical device making

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29832, H01C 1702

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active

048707457

ABSTRACT:
A silicon-based sensor includes a substrate, a sensor element, and a protective diaphragm mounting and covering the sensor element. The diaphragm is a silicon layer which, in a preferred embodiment, includes an etch-stop dopant. The etch-stop layer is sealed to the substrate so that the layer covers and mounts the sensor element to the substrate. The sensor is fabricated by forming a trough area in a surface of a silicon block (e.g., a silicon chip or wafer), treating the trough area with an etch-stop dopant (e.g., boron), depositing a sensor element onto the doped trough area, sealing at least the periphery of the doped trough area to a surface of a substrate (e.g., glass) so as to encapsulate the sensor element, and then etching away undoped regions of the silicon block so that the doped trough area remains as a protective diaphragm sealed to the substrate and covering the sensor element. It is also possible to form a bonding pad on untreated (e.g., undoped) discontinuous regions of an otherwise etch-stop treated trough layer so that when etched, the bonding pad is exposed to permit interconnection with electronic circuitry, yet the etch-stop treated layer remains so as to mount the bonding pad to the substrate.

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SAE Technical Paper, "Silicon Micromachining Technology for Automotive Applications", K. W. Lee and B. E. Walker.

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