Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1996-07-22
1999-10-12
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257751, 257752, 257759, H01L 2348, H01L 2352, H01L 2940
Patent
active
059659343
ABSTRACT:
The interconnects in a semiconductor device contacting metal lines comprise a low resistance metal, such as copper, gold, silver, or platinum, and are separated by a material having a low dielectric constant, such as benzocyclobutene or a derivative thereof A tri-layer resist structure is used, together with a lift-off process, to form the interconnects. The low dielectric constant material provides a diffusion barrier to the diffusion of the low resistance metal. The tri-layer resist comprises a first layer of a dissolvable polymer, a second layer of a hard mask material, and a third layer of a resist material. The resulting structure provides an integrated circuit with increased speed and ease of fabrication.
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Chang Mark S.
Cheung Robin W.
Advanced Micro Devices , Inc.
Mintel William
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