Semiconductor pattern delineation by sputter etching process

Details Semiconductor pattern delineation by sputter etching process Semiconductor pattern delineation by sputter etching process

1975-02-07

1976-10-05

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

C23C 1500

Patent

active

039843009

ABSTRACT:
A layer is patterned by sputter etching using a photoresist as a sputter-etch-mask and using a thin metal layer between the mask and the layer or layer-system to be patterned. The metal layer is extremely thin and consists of a metal that is itself useless as a sputter-etch-mask. The process is especially important in the manufacture of semiconductor devices.

REFERENCES:
patent: 3400066 (1968-09-01), Caswell et al.
patent: 3436327 (1969-04-01), Shockley
patent: 3649503 (1972-03-01), Terry
patent: 3676317 (1972-07-01), Harkins, Jr.
patent: 3791952 (1974-02-01), Labuda et al.

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