Post-etching alkaline treatment process

Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...

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134 13, 134 33, 438691, 438692, 438959, C30C 2300, B08B 600, B08B 700

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active

059649534

ABSTRACT:
The present invention is directed to a process for removing aluminum contamination from the surface of an etched semiconductor wafer. The process is carried out by first lapping a semiconductor wafer in a lapping slurry containing aluminum, etching the wafer, and finally immersing the wafer in an aqueous bath, the bath comprising an alkaline component and a surfactant.

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