Method of producing a self-aligned window at recessed intersecti

Details Method of producing a self-aligned window at recessed intersecti Method of producing a self-aligned window at recessed intersecti

1993-01-15

1994-08-02

Fourson, George

Fishing, trapping, and vermin destroying

437 69, 437 70, 437984, H01L 2176

Patent

active

053345509

ABSTRACT:
An integrated circuit structure and process relating to a self-aligned window at the recessed junction of two insulating regions formed on the surface of a semiconductor body. The window may include a trench forming an isolation region between doped semiconductor regions, or may include an electrical conductor connected to a doped semiconductor region, or may include an electrical conductor separated from doped semiconductor regions by an electrical insulator. Embodiments include, but are not limited to, a field-effect transistor, a tunnelling area for a floating gate transistor, and an electrical connection to a doped area of the substrate.

REFERENCES:
patent: 5028559 (1991-07-01), Zdebel et al.
patent: 5120675 (1992-06-01), Pollack
Woll, S., Silicon Processing for the VLSI Era vol. 2: Process Integration, Lattice Press 1990 pp. 20-23.

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