Test circuit for measuring specific contact resistivity of self-

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

324713, 324 731, G01R 3126, G01R 2714

Patent

active

048961086

ABSTRACT:
A test circuit is described for measuring the specific contact resistivity r.sub.c of self-aligned electrodes contacting underlying diffused regions at a major surface of an underlying semiconductor wafer, as well as the sheet (lateral) resistance r.sub.s of the underlying diffused regions in some embodiments. The test circuit illustratively includes a pair of test MOS or other type of transistors advantageously made by a self-aligned metallization process simultaneously with the other MOS or other type of transistors to be tested. The two test transistors share a common diffused region, a self-aligned common controlled electrode contacting a diffused region underneath it, and a common control electrode. During test operation, both est transistors are kept ON by means of an applied above-threshold control voltage, while a current source forces current through one of the transistors. The resulting voltage, developed across the common controlled electrode and the controlled electrode of the other transistor is a measure of the specific contact resistivity thereat.

REFERENCES:
patent: 4517225 (1985-05-01), Broadbent
patent: 4542340 (1985-09-01), Chakravarti et al.
patent: 4628144 (1986-12-01), Burger
patent: 4706015 (1987-11-01), Chen
patent: 4789825 (1988-12-01), Carelli et al.
J. G. Chern, "Determining Specific Contact Resistivity from Contact End Resistance Measurements," IEEE Electron Device Letters, vol. EDL-5, pp. 178-180 (1984).
W. M. Loh, K. Saraswat, R. W. Dutton, "Analysis and Scaling of Kelvin Resistors for Extraction of Specific Contact Resistivity," IEEE Electron Device Letters, vol. EDL-6, pp. 105-108 (1985).
T. J. Faith, R. S. Irven, S. K. Plante, J. J. O'Neill, Jr., "Contact resistance: Al and Al-Si to diffused N.sup.+ and P.sup.+ silicon," J. Vac. Sci. Technol., pp. 443-448 (1983).
S. J. Proctor, "A Direct Measurement of Interfacial Contact Resistance," IEEE Electron Device Letters, vol. EDL-3, pp. 294-296 (1982).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Test circuit for measuring specific contact resistivity of self- does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Test circuit for measuring specific contact resistivity of self-, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Test circuit for measuring specific contact resistivity of self- will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-647056

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.