Non-volatile semiconductor memory

Static information storage and retrieval – Floating gate – Particular biasing

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365189, 357 235, G11C 700

Patent

active

046163409

ABSTRACT:
In the non-volatile semiconductor memory of present invention, a select gate and a floating gate are formed on the surface portion of the substrate between a source region and the drain region also acting as a control gate through a gate oxide film. A part of a channel current is injected into the floating gate at the surface portion under the edge of the floating gate covered by the select gate.

REFERENCES:
patent: 4099196 (1978-07-01), Simko
patent: 4200841 (1980-04-01), Nagata et al.
patent: 4328565 (1982-05-01), Harari
patent: 4412311 (1983-10-01), Miccoli et al.

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